首页> 外国专利> SUSCEPTOR EPITAXIAL GROWTH DEVICE AND EPITAXIAL WAFER

SUSCEPTOR EPITAXIAL GROWTH DEVICE AND EPITAXIAL WAFER

机译:上位器外延生长装置和外延片

摘要

The present invention provides a susceptor capable of suppressing oscillation from a susceptor without generating a deep scratch due to contact of a lift pin or a susceptor with the back surface and chamfered portion of the wafer. The susceptor 20 of an embodiment of the present invention includes a susceptor body 30 and arcuate members 40A and 40B. The bottom surface of the counterboring portion 21 is composed of the entire surfaces 41A and 41B of the arc-shaped susceptor member and a part 33 of the surface of the susceptor main body. The entire surface of the arc-shaped members 40A and 40B raised by the lift pins 44 supports only the outer peripheral portion of the back surface of the wafer W in surface contact when the wafer W is carried.;
机译:本发明提供了一种基座,该基座能够抑制基座的振动,而不会由于升降销或基座与晶片的背面和倒角部分的接触而产生深的划痕。本发明的实施例的基座20包括基座主体30以及弓形构件40A和40B。沉孔部21的底表面由弧形基座部件的整个表面41A和41B以及基座主体的表面的一部分33组成。通过升降销44上升的圆弧状部件40A,40B的整个表面仅在搬运晶片W时以面接触的方式支撑晶片W的背面的外周部。

著录项

  • 公开/公告号KR20170122277A

    专利类型

  • 公开/公告日2017-11-03

    原文格式PDF

  • 申请/专利权人 가부시키가이샤 사무코;

    申请/专利号KR20177029628

  • 发明设计人 와다 나오유키;노가미 쇼지;

    申请日2016-04-22

  • 分类号H01L21/683;C23C16/458;C30B25/12;H01L21/687;

  • 国家 KR

  • 入库时间 2022-08-21 13:26:20

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