EDGE TERMINATION FOR SUPER JUNCTION MOSFET DEVICES

摘要

In one embodiment, a metal oxide semiconductor field effect transistor (" MOSFET ") device may include a substrate and a charge compensation region located above the substrate. The charge compensation region may comprise a plurality of columns with P type dopants in the N type dopant region. The super junction MOSFET may also include a termination region located above the charge compensation region, and the termination region may comprise an N-type dopant. The super junction MOSFET may also include an edge termination structure. The termination region includes a portion of the edge termination structure.