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SINGLE-CRYSTAL DIAMOND GROWTH BASE MATERIAL AND METHOD FOR MANUFACTURING SINGLE-CRYSTAL DIAMOND SUBSTRATE
SINGLE-CRYSTAL DIAMOND GROWTH BASE MATERIAL AND METHOD FOR MANUFACTURING SINGLE-CRYSTAL DIAMOND SUBSTRATE
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机译:单晶金刚石生长基料和制造单晶金刚石基体的方法
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摘要
An object of the present invention is to provide a base for growing a single crystal diamond and a method of manufacturing a single crystal diamond substrate which can grow a single crystal diamond having a large area and good crystallinity and can produce a high quality single crystal diamond substrate at low cost. A base material for growing a monocrystalline diamond, comprising at least a base substrate made of a material having a linear expansion coefficient smaller than MgO and of 0.5 x 10 -6 / K or more, and a base substrate formed by a bonding method on the side of the base substrate on which the single crystal diamond is grown A single crystal MgO layer and a film made of any one of an iridium film, a rhodium film, and a platinum film grown by heteroepitaxial growth on the single crystal MgO layer.
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机译:本发明的目的是提供一种用于生长单晶金刚石的基体和一种制造单晶金刚石基底的方法,其可以生长具有大面积和良好结晶度的单晶金刚石并且可以生产高质量的单晶金刚石。低成本基板。一种用于生长单晶金刚石的基础材料,至少包括由线性膨胀系数小于MgO且大于或等于0.5 x 10 Sup> -6 Sup / K的材料制成的基础基板,以及通过粘合方法在其上生长有单晶金刚石的一侧上形成的基础衬底通过异质外延生长的单晶MgO层和由铱膜,铑膜和铂膜中的任一种制成的膜在单晶MgO层上生长。
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