graphene substituted with boron and nitrogen and method of fabricationg the same and transistor having the same

摘要

Boron and nitrogen-substituted graphene, a method for producing the same, and a transistor including the same are disclosed. The disclosed graphenes contain 1-20% of the carbon atoms of boron and nitrogen. The graphenes substituted with boron and nitrogen have a band gap of approximately 0.05 - 0.45 eV and thus can be used as channels of field effect transistors.