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Graphene substituted with boron and nitrogen, method of fabricating the same, and transistor having the same
Graphene substituted with boron and nitrogen, method of fabricating the same, and transistor having the same
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机译:被硼和氮取代的石墨烯,其制造方法以及具有该石墨烯的晶体管
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摘要
Graphene, a method of fabricating the same, and a transistor having the graphene are provided, the graphene includes a structure of carbon (C) atoms partially substituted with boron (B) atoms and nitrogen (N) atoms. The graphene has a band gap. The graphene substituted with boron and nitrogen may be used as a channel of a field effect transistor. The graphene may be formed by performing chemical vapor deposition (CVD) method using borazine or ammonia borane as a boron nitride (B-N) precursor.
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