Method for the plasma-assisted deposition of aluminum oxide thin films on semiconductor wafers for the production of wafer solar cells and inline PECVD system

摘要

The invention relates to a method for the plasma-assisted deposition of aluminum oxide thin films on semiconductor wafers for the production of wafer solar cells with the following method steps: provision of an inline PECVD system with at least one plasma chamber (1) equipped with a plasma electrode (10) arranged in the plasma chamber, a vacuum pump system (11 ) and an inline transport device (12) for the horizontal transport of semiconductor wafers along an in-line transport direction (T), arranging semiconductor wafers on the in-line transport device (12), injecting the in-line transport device (12) with the semiconductor wafers into the plasma chamber (1), introducing an oxygen-containing gas at a first gas inlet (13) into the activated plasma chamber (1), introducing an aluminum-containing gas at a further gas inlet (14) spaced from the first gas inlet (13) into the activated plasma chamber (1) the further gas inlet (14) closer the in-line transport device (12) and farther from the plasma electrode (10) than the first gas inlet (13), moving the in-line transport device (12) along the in-line transport direction (T) through the plasma chamber (1), characterized in that the introduction of the aluminum-containing gas into the plasma chamber (1) in the direction of the in-line transport direction (T) is carried out exclusively or predominantly in front of the plasma electrode (10) or exclusively or predominantly behind the plasma electrode (10). Furthermore, the invention relates to a corresponding inline PECVD system.