METHOD FOR PRODUCING CZ-SILICON WAFERS AND METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE

摘要

According to a method for manufacturing CZ silicon wafers, a CZ silicon ingot or a CZ silicon ingot section is cut into CZ silicon wafers (S100). A parameter of at least two of the CZ silicon wafers is measured (S110). A group of CZ silicon wafers lying within a tolerance of a target specification is determined (S120). The group of CZ silicon wafers is divided into subgroups taking into account the measured parameter. An average value of the parameter of the CZ silicon wafers of each subgroup differs among the subgroups, and a tolerance of the parameter of the CZ silicon wafers of each subgroup is less than a tolerance of the parameter of the target specification. A label designed to distinguish between the CZ silicon wafers of different subgroups is prepared (S130). The CZ silicon wafers lying within the tolerance of the target specification are packaged (S140).