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Influence of Device Microstructure on The Optical Properties of Ge1-ySny (y=00.11) LEDs Produced by Next Generation Deposition Methods

机译：装置微观结构对由下一代沉积方法产生的GE1-ysny（Y = 00.11）LED的光学性质

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J. D. Gallagher; T. Aoki; P. Sims; J. Menendez; J. Kouvetakis;
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年度 2015
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Influence of Device Microstructure on The Optical Properties of Ge1-ySny (y=00.11) LEDs Produced by Next Generation Deposition Methods

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