SEMICONDUCTOR DEVICE, SEMICONDUCTOR WAFER, METHOD FOR PRODUCING SEMICONDUCTOR WAFER, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE

摘要

There is provided a semiconductor device including a first channel-type first MISFET formed and a second channel-type second MISFET: a first source and a first drain of the first MISFET and a second source and a second drain of the second MISFET are made of the same conductive substance, and the work function Φ_M of the conductive substance satisfies at least one of relations respectively represented by (1) φ₁Φ_Mφ₂+E_g2, and (2) |Φ_M−Φ₁|≦0.1 eV and |(φ₂+E_g2)−Φ_M|≦0.1 eV, where φ₁ represents an electron affinity of an N-type semiconductor crystal layer, and φ₂ and E_g2 represent an electron affinity and a band gap of a crystal of a P-type semiconductor crystal layer.