With a high electron mobility transistor with a charge carrier injection attenuation - gate - structure

摘要

A method comprising providing a hetero structure body with a buffer zone and a barrier region, which, on the buffer zone is arranged, and the production of a gate - structure for controlling of the channel on the hetero structure body, wherein the gate - structure of a doped semiconductor region, which, on the hetero structure body is disposed, an intermediate layer which is arranged on the doped semiconductor region, and a gate - electrode, which is arranged on the intermediate layer has. The production of the gate - structure comprises the control of a doping concentration of the doped semiconductor region, so that a section of the channel adjacent to the gate - structure in the case of a gate - preload of zero is not conductive, and control of electrical and geometric properties of the intermediate layer on the basis of a relationship between the electrical and geometric properties of the intermediate layer and corresponding effects on a static threshold voltage and a dynamic threshold voltage displacement of the semiconductor component.