METHOD FOR DETERMINING PHYSICAL PROPERTY OF MONOCRYSTALLINE SILICON CARBIDE SUBSTRATE AND METHOD FOR MANUFACTURING MONOCRYSTALLINE SILICON CARBIDE SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a method for obtaining information about a physical property of a monocrystalline SiC substrate by use of a grinder.;SOLUTION: A method for determining a physical property of a monocrystalline SiC substrate subjected to a grinding work by a grinder with a grinding wheel spindle motor 12 comprises the steps of: monitoring the value of a first current required for an operation of the grinding wheel spindle motor 12 when performing a grinding work on a first monocrystalline SiC substrate of which the physical property is known; monitoring the value of a second current required for an operation of the grinding wheel spindle motor 12 when performing a grinding work on a second monocrystalline SiC substrate of which the physical property is unknown; and determining the physical property of the second monocrystalline SiC substrate by making comparison between the first and second current values in behavior.;SELECTED DRAWING: Figure 1;COPYRIGHT: (C)2018,JPO&INPIT