HIGH-FLATNESS LOW-DAMAGE AND LARGE-DIAMETER MONOCRYSTALLINE SILICON CARBIDE SUBSTRATE AND MANUFACTURING METHOD THEREFOR

摘要

The present application discloses a high flatness, low-damage, big-diameter, single-crystal silicon carbide substrate and a manufacturing method, and relates to a crystalline material processing technology field. The surface roughness of the substrate is ≤0.2 nm, the fine scratch die ratio of the substrate is <10%, the pit ratio is <0.1 pieces/cm 2 , and the bump ratio is <0.1 pieces/cm 2 . The manufacturing method includes the steps of performing complete solidification abrasive processing on single crystal silicon carbide, and performing chemical mechanical polishing processing again to obtain a single crystal silicon carbide substrate with high flatness and low damage, wherein the high bonding abrasive processing includes wire It includes cutting and grinding stone, consolidating abrasive grains on the cutting wire, and consolidating abrasive grains on the whetstone. The surface roughness, fine scratch die ratio, pit ratio, and bump of the single crystal silicon carbide substrate manufactured by the manufacturing method of the present application are all relatively low, and the surface data is good, the thickness deviation is small, the degree of bending is small, The bending degree is small.