HIGH-FLATNESS, LOW-DAMAGE AND LARGE-DIAMETER MONOCRYSTALLINE SILICON CARBIDE SUBSTRATE, AND MANUFACTURING METHOD THEREFOR

摘要

The present application discloses a high-flatness low-damage large-diameter single crystal silicon carbide substrate and a preparation method thereof, and relates to the field of crystal material processing technologies. Surface roughness of the substrate is ≦0.2 nm, a fine scratch die proportion of the substrate is 10%, a pit proportion is 0.1 /cmsup2/sup, and a bump proportion is 0.1 /cmsup2/sup. The preparation method comprises steps of: performing fully-consolidified abrasive processing on single crystal silicon carbide, and then performing a chemical mechanical polishing treatment to obtain the high-flatness low-damage single crystal silicon carbide substrate; wherein, the consolidated abrasive processing includes line cutting and sand wheel grinding, the cutting line has abrasive particles consolidated thereon, and the sand wheel has abrasive particles consolidated thereon. The single crystal silicon carbide substrate prepared by using the preparation method according to the present application has the surface roughness, the fine scratch die proportion, the pit proportion and the bump proportion which are all relatively low, and it also has good surface data, small thickness deviation, small Bow and small Warp.