Simple method for the growth of 4H silicon carbide on silicon substrate

摘要

In this study we report thermal evaporation technique as a simple method for the growth of 4H silicon carbide on p-type silicon substrate. A mixture of Si and C60powder of high purity (99.99%) was evaporated from molybdenumboat. The as grown film was characterized by XRD,FTIR, UV-Vis Spectrophotometer and Hall Measurements. The XRD pattern displayed four peaks at 2Θ angles 28.550, 32.700, 36.100 and 58.900 related to Si (1 1 1), 4H-SiC (1 0 0), 4H-SiC (1 1 1) and 4H-SiC (2 2 2), respectively. FTIR, UV-Vis spectrophotometer and electrical properties further strengthened the 4H-SiC growth.