LITHOGRAPHY METHOD WITH JOINT OPTIMIZATION OF RADIANT ENERGY AND DESIGN SHAPE

摘要

PROBLEM TO BE SOLVED: To provide an electron beam lithography method which makes it possible to significantly reduce an increase in exposure time for correcting a proximity effect.SOLUTION: For dense network geometry (line spacing of 10 to 30 nm), by changing the size of a pattern to be etched by adding a shot 616 to an outside of the pattern, and by reducing the radiation dose of inner shots 611 to 615, a pattern to be etched is corrected according to an energy tolerance of a process.SELECTED DRAWING: Figure 6