LITHOGRAPHY METHOD WITH COMBINED OPTIMIZATION OF RADIATED ENERGY AND DESIGN GEOMETRY

摘要

The present invention relates to a method for lithography of a pattern to be etched into a support, and more particularly to a method of using electron radiation which is written directly to a support. From now on, a method for correcting the proximity effect to dense geometry (line spacing of 10 to 30 nm) results in a significant increase in radiation dose and thus an increase in exposure time. According to the present invention, the pattern to be etched is modified according to the process energy latitude, and thus the radiation dose is reduced.