PLASMA ATOMIC LAYER GROWTH APPARATUS, AND ATOMIC LAYER GROWTH METHOD

摘要

PROBLEM TO BE SOLVED: To provide a plasma atomic layer growth apparatus capable of improving film quality of a film formed on a substrate.SOLUTION: An atomic layer growth apparatus, which is a plasma atomic layer growth apparatus for depositing a film in an atomic layer unit on a substrate 1S by generating plasma arc between a bottom electrode BE for holding the substrate 1S and an upper electrode UE arranged oppositely to the bottom electrode BE, includes an adhesion preventive member CTM comprising an insulator for separating and enclosing the upper electrode UE in a plane view.SELECTED DRAWING: Figure 5