Magnetic tunneling junction using spin-orbit interaction based on switching and method and system for providing memory utilizing magnetic tunneling junction

摘要

A magnetic memory is described. The magnetic memory includes magnetic junctions and at least one spin-orbit interaction (SO) active layer. Each of the magnetic junctions includes a data storage layer that is magnetic. The SO active layer(s) are adjacent to the data storage layer of the magnetic junction. The at SO active layer(s) are configured to exert a SO torque on the data storage layer due to a current passing through the at least one SO active layer in a direction substantially perpendicular to a direction between the at least one SO active layer and the data storage layer of a magnetic junction of the plurality of magnetic junctions closest to the at least one SO active layer. The data storage layer is configured to be switchable using at least the SO torque.