METHOD AND SYSTEM FOR PROVIDING A MAGNETIC TUNNELING JUNCTION USING SPIN-ORBIT INTERACTION BASED SWITCHING AND MEMORIES UTILIZING THE MAGNETIC TUNNELING JUNCTION

摘要

Magnetic memory is described. The magnetic memory includes magnetic junctions and at least one spin orbital interaction (SO) active film. Each of the magnetic junctions includes a magnetic data storage layer. The SO active film (s) are adjacent to the data storage film of the magnetic junction. The SO active film (s) is in the direction perpendicular to the direction between the at least one SO active film and the data storage film of the magnetic junction of the plurality of magnetic junctions closest to the at least one SO active film. The current flowing through one SO active film is configured to apply SO torque to the data storage film. The data storage film is configured to be switchable using at least the SO torque.