Pattern forming method, electronic device manufacturing method, resin manufacturing monomer for semiconductor device manufacturing process, resin, resin manufacturing method, actinic ray sensitive or radiation sensitive resin composition, and actinic ray sensitive or radiation sensitive film

摘要

A resin (A) obtained from a monomer having a turbidity of 1 ppm or less based on JIS K0101: 1998, which is a monomer having a silicon atom, using formazine as a standard substance and using an integrating sphere measurement method as a measurement method By a pattern forming method comprising a film forming step of forming a film with a resin composition contained therein, an ultrafine pattern (for example, a line-and-space pattern having a line width of 50 nm or less or a hole having a hole diameter of 50 nm or less) The present invention provides a pattern forming method capable of remarkably improving the scum defect performance and an electronic device manufacturing method using the same. In addition, by the above monomer, a monomer for producing a resin for a semiconductor device production process having the above effects, a resin, a resin production method, an actinic ray-sensitive or radiation-sensitive resin composition using the same, and a sensitivity An actinic or radiation sensitive film is provided.