4h-SiC insulated gate bipolar transistor and manufacturing method thereof

摘要

A structure of the present invention makes it possible to provide a device having less minority carrier lifetime change due to silicide formation in a collector p+ collector region, and no reliability degradation, such as conduction degradation, since the film thickness of a rear-surface silicide region in contact with a rear-surface collector electrode is less than that of a front-surface silicide layer, said rear-surface silicide region containing Al, less SiC is to be eroded due to silicidation, and a thermal load applied during the silicide formation is small.