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Thin film transistor with a reaction layer creating oxygen vacancies in an oxide semiconductor
Thin film transistor with a reaction layer creating oxygen vacancies in an oxide semiconductor
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机译:具有反应层的薄膜晶体管在氧化物半导体中产生氧空位
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摘要
A thin film transistor includes a gate electrode on a substrate, a gate insulation layer which covers the gate electrode on the substrate, an oxide semiconductor pattern which is disposed on the gate insulation layer and includes a channel portion superimposed over the gate electrode, and low resistance patterns provided at edges of the channel portion, respectively, and including oxygen vacancies, a channel passivation layer on the oxide semiconductor pattern, a reaction layer which covers the oxide semiconductor pattern and the channel passivation layer, and includes a metal oxide, and a source electrode and a drain electrode which contact the oxide semiconductor pattern.
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