首页> 外国专利> PROCESS FOR OBTAINING SEMICONDUCTOR NANODEVICES WITH PATTERNED METAL-OXIDE THIN FILMS DEPOSITED ONTO A SUBSTRATE, AND SEMICONDUCTOR NANODEVICES THEREOF

PROCESS FOR OBTAINING SEMICONDUCTOR NANODEVICES WITH PATTERNED METAL-OXIDE THIN FILMS DEPOSITED ONTO A SUBSTRATE, AND SEMICONDUCTOR NANODEVICES THEREOF

机译:获得带有沉积在基质上的金属氧化物薄膜的半导体纳米器件的方法,以及由此获得的半导体纳米器件

摘要

Processes for obtaining a semiconductor nanodevice comprising a substrate, onto which patterned metal-oxide thin films having semiconductor properties are deposited, are provided, as well as semiconductor devices comprising them. The present invention belongs to the field of semiconductor nanodevices.
机译:提供了用于获得包括衬底的半导体纳米器件的方法,该衬底上沉积了具有半导体特性的图案化的金属氧化物薄膜,以及包括该衬底的半导体器件。本发明属于半导体纳米器件领域。

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