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首页> 外文期刊>CERAMICS INTERNATIONAL >Transparent semiconductor zinc oxide thin films deposited on glass substrates by sol—gel process
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Transparent semiconductor zinc oxide thin films deposited on glass substrates by sol—gel process

机译:通过溶胶-凝胶法沉积在玻璃基板上的透明半导体氧化锌薄膜

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摘要

Transparent semiconductor ZnO thin films were spin-coated onto alkali-free glass substrates by a sol–gel process. The influence of ZnO sols synthesized via different solvents (2-ME, EtOH or IPA) on the surface morphologies, microstructures, optical properties and resistivities of the obtained films were investigated. The as-coated films were annealed in ambient air at 500 °C for 1 h. X-ray diffraction results showed all polycrystalline ZnO thin films to have preferred orientation along the (0 0 2) plane. The surface morphologies, optical transmittances and resistivity values of the sol–gel derived ZnO thin films depended on the solvent used. The ZnO thin films synthesized with IPA as the solvent exhibited the highest average transmittance 92.2%, an RMS roughness of 4.52 nm and a resistivity of 1.5 x 10~5Ωcm.
机译:透明半导体ZnO薄膜通过溶胶-凝胶工艺旋涂到无碱玻璃基板上。研究了通过不同溶剂(2-ME,EtOH或IPA)合成的ZnO溶胶对所得薄膜的表面形貌,微观结构,光学性质和电阻率的影响。将涂覆后的薄膜在环境空气中于500°C退火1小时。 X射线衍射结果表明,所有多晶ZnO薄膜都具有沿(0 0 2)面的优选取向。溶胶-凝胶衍生的ZnO薄膜的表面形貌,透光率和电阻率值取决于所用的溶剂。以IPA为溶剂合成的ZnO薄膜的平均透射率最高,为92.2%,RMS粗糙度为4.52 nm,电阻率为1.5 x 10〜5Ωcm。

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