首页> 外国专利> SEMICONDUCTOR DEVICE STRUCTURES INCLUDING TWO-DIMENSIONAL MATERIAL STRUCTURES, AND RELATED SEMICONDUCTOR DEVICES AND ELECTRONIC SYSTEMS

SEMICONDUCTOR DEVICE STRUCTURES INCLUDING TWO-DIMENSIONAL MATERIAL STRUCTURES, AND RELATED SEMICONDUCTOR DEVICES AND ELECTRONIC SYSTEMS

机译:包括二维材料结构的半导体器件结构,以及相关的半导体器件和电子系统

摘要

A method of forming a semiconductor device structure comprises forming at least one 2D material over a substrate. The at least one 2D material is treated with at least one laser beam having a frequency of electromagnetic radiation corresponding to a resonant frequency of crystalline defects within the at least one 2D material to selectively energize and remove the crystalline defects from the at least one 2D material. Additional methods of forming a semiconductor device structure, and related semiconductor device structures, semiconductor devices, and electronic systems are also described.
机译:一种形成半导体器件结构的方法,包括在衬底上方形成至少一种2D材料。用具有与至少一种2D材料内的晶体缺陷的共振频率相对应的电磁辐射的频率的至少一种激光束对至少一种2D材料进行处理,以从至少一种2D材料中选择性地激发并去除晶体缺陷。 。还描述了形成半导体器件结构的附加方法,以及相关的半导体器件结构,半导体器件和电子系统。

著录项

  • 公开/公告号US2018277373A1

    专利类型

  • 公开/公告日2018-09-27

    原文格式PDF

  • 申请/专利权人 MICRON TECHNOLOGY INC.;

    申请/专利号US201815986129

  • 发明设计人 ROY E. MEADE;SUMEET C. PANDEY;

    申请日2018-05-22

  • 分类号H01L21/268;H01L21/02;H01L29/06;H01L21/477;

  • 国家 US

  • 入库时间 2022-08-21 12:58:34

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号