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Flash memory device including deduplication, and related methods

机译:包括重复数据删除的闪存设备以及相关方法

摘要

A flash memory device includes physical pages that store data sectors therein. The method of operating the flash memory device includes receiving write data sectors to be stored in the flash memory device, pairing the write data sectors with write data sectors and with written data sectors previously stored in physical pages of the flash memory device based upon a matching and deduplication operation to define data sector pairs and a difference therebetween, and rewriting to the physical pages of the flash memory device, in a partial-page writing mode, to store the difference between the write data sector and its respective paired data sector. The partial-page writing mode is performed on a respective physical page after a previous programming and before erasing. The written data sectors included in the data sector pairs only partially occupy the corresponding physical page of the flash memory device. The difference between the write data sector and its respective paired data sector is stored in an unoccupied portion of the corresponding physical page of the flash memory device.
机译:闪存设备包括在其中存储数据扇区的物理页。操作闪存设备的方法包括:接收要存储在闪存设备中的写入数据扇区;基于匹配,将写入数据扇区与写入数据扇区以及先前存储在闪存设备的物理页中的写入数据扇区配对。重复数据删除操作用于定义数据扇区对及其之间的差异,并在部分页面写入模式下重写到闪存设备的物理页面,以存储写入数据扇区与其相应的成对数据扇区之间的差异。在先前的编程之后并且在擦除之前,在相应的物理页面上执行部分页面写入模式。数据扇区对中包括的已写入数据扇区仅部分占据了闪存设备的相应物理页。写数据扇区与其相应的成对数据扇区之间的差被存储在闪存设备的相应物理页面的未占用部分中。

著录项

  • 公开/公告号US9841918B2

    专利类型

  • 公开/公告日2017-12-12

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO. LTD.;

    申请/专利号US201514956715

  • 发明设计人 ELONA EREZ;AVNER DOR;JUN JIN KONG;

    申请日2015-12-02

  • 分类号G06F3/06;

  • 国家 US

  • 入库时间 2022-08-21 12:58:30

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