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Resistive non-volatile memory and a method for sensing a memory cell in a resistive non-volatile memory
Resistive non-volatile memory and a method for sensing a memory cell in a resistive non-volatile memory
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机译:电阻式非易失性存储器和用于感测电阻式非易失性存储器中的存储单元的方法
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摘要
A memory device includes a sense amplifier coupled to a first read voltage during a first phase of a read operation and a second read voltage during a second phase of the read operation. A first and second bias voltages are based on the first and second read voltages and corresponding current on a bit line. A first capacitor includes a terminal coupled to the first and second bias voltages. A first amplifier includes an input coupled to another terminal of the first capacitor and another input coupled to a common mode voltage during the first phase and to a reference voltage during the second phase. A second capacitor includes a terminal coupled to an output of the first amplifier. A second amplifier includes an inverting input coupled to another terminal of the second capacitor and another input coupled to a common mode voltage.
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