Sub-pixel and sub-resolution localization of defects on patterned wafers

摘要

Methods and systems for determining if a defect detected on a specimen is a DOI (Defect of Interest) or a nuisance are provided. One system includes computer subsystem(s) configured for aligning output of an inspection subsystem for an area on a specimen to simulated output of the inspection subsystem for the area on the specimen and detecting a defect in the output for the area on the specimen. The computer subsystem(s) are also configured for determining a location of the defect in the output with respect to patterned features in the simulated output based on results of the detecting and aligning, determining a distance between the determined location of the defect and a known location of interest on the specimen, and determining if the defect is a DOI or a nuisance based on the determined distance.