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Methods for fabricating integrated circuits using flowable chemical vapor deposition techniques with low-temperature thermal annealing
Methods for fabricating integrated circuits using flowable chemical vapor deposition techniques with low-temperature thermal annealing
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机译:使用可流动化学气相沉积技术和低温热退火工艺制造集成电路的方法
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摘要
Methods for fabricating integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes forming an isolation trench between two fin structures on an integrated circuit substrate, forming a flowable film in the isolation trench using a flowable chemical vapor deposition process, and annealing the flowable film to form a silicon oxide dielectric layer in the isolation trench. The annealing is performed at a temperature of less than about 200° C. with a process gas including N2 and H2O2.
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机译:提供了制造集成电路的方法。在一个示例中,一种用于制造集成电路的方法包括:在集成电路衬底上的两个鳍结构之间形成隔离沟槽;使用可流动的化学气相沉积工艺在隔离沟槽中形成可流动的膜;以及对可流动的膜进行退火以形成薄膜。隔离沟槽中的氧化硅介电层。使用包括N 2 Sub>和H 2 Sub> O 2 Sub>的工艺气体在小于约200℃的温度下进行退火。
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