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Synthesis and characterization of tungsten oxide nanorods from chemical vapor deposition-grown tungsten film by low-temperature thermal annealing

机译:化学气相沉积生长钨膜低温热退火法合成和表征氧化钨纳米棒

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摘要

A simple thermal annealing was performed to prepare tungsten oxide nanorods directly from tungsten (W) film. The W film was deposited on Si(100) substrate by chemical vapor deposition (CVD) at 450 ℃ using W(C0)_6. A high density of tungsten oxide nanorods was produced by heating of the W film at 600-700 ℃. The morphology, structure, composition, and chemical binding states of the prepared nanorods were characterized by scanning electron microscopy (SEM), x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and transmission electron microscopy (TEM) analysis. XRD and TEM results showed that the grown nanorods were single-crystalline W_(18)O_(49). According to XPS analysis, the W_(18)O_(49) nanorods contained -55.69% W~(6+), -32.28% W~(5+), and -12.03% W~(4+). The growth mechanism based on thermodynamics is discussed for the growth of tungsten oxide nanorods from W film.
机译:进行简单的热退火以直接从钨(W)膜制备氧化钨纳米棒。使用W(C0)_6在450℃下通过化学气相沉积(CVD)将W膜沉积在Si(100)衬底上。通过在600-700℃下加热W膜可以生产出高密度的氧化钨纳米棒。通过扫描电子显微镜(SEM),X射线衍射(XRD),X射线光电子能谱(XPS)和透射电子显微镜(TEM)分析来表征所制备纳米棒的形态,结构,组成和化学键合状态。 。 XRD和TEM结果表明,生长的纳米棒为单晶W_(18)O_(49)。根据XPS分析,W_(18)O_(49)纳米棒包含-55.69%W〜(6 +),-32.28%W〜(5+)和-12.03%W〜(4+)。讨论了基于热力学的生长机理,以从W膜中生长氧化钨纳米棒。

著录项

  • 来源
    《Journal of Materials Research》 |2008年第5期|p.1320-1326|共7页
  • 作者

    Seongho Jeon; Kijung Yong;

  • 作者单位

    Surface Chemistry Laboratory of Electronic Materials, Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Hyoja-dong, Nam-gu, Pohang, Kyungbuk 790-784, Korea;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;
  • 关键词

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