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TRANSLUCENT FILM MANUFACTURING METHOD, OXIDE SEMICONDUCTOR HAVING ABSORPTION PROPERTY IN VISIBLE LIGHT REGION, AND MANUFACTURING METHOD THEREFOR
TRANSLUCENT FILM MANUFACTURING METHOD, OXIDE SEMICONDUCTOR HAVING ABSORPTION PROPERTY IN VISIBLE LIGHT REGION, AND MANUFACTURING METHOD THEREFOR
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机译:半透明膜制造方法,在可见光区域具有吸收性能的氧化物半导体及其制造方法
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摘要
The present invention relates to a method for manufacturing an oxide semiconductor having absorption properties in the visible light region, the method comprising: an S1 step for forming a translucent film layer on a substrate in a non-vacuum state by using electrodeposition; and an S2 step for forming an active layer on the translucent film layer in a non-vacuum state by using electrodeposition, wherein the preferred orientation of the translucent film layer is determined in a particular direction, and the active layer grows in the particular direction determined in the translucent film layer. By controlling an electrochemical growth behavior through a metal surfactant, the present invention shows the effect of solving the high-resistivity problem, that is, the drawback of a p-type oxide semiconductor grown in a low-temperature electrodeposition process.
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