TRANSLUCENT FILM MANUFACTURING METHOD, OXIDE SEMICONDUCTOR HAVING ABSORPTION PROPERTY IN VISIBLE LIGHT REGION, AND MANUFACTURING METHOD THEREFOR

摘要

The present invention relates to a method for manufacturing an oxide semiconductor having absorption properties in the visible light region, the method comprising: an S1 step for forming a translucent film layer on a substrate in a non-vacuum state by using electrodeposition; and an S2 step for forming an active layer on the translucent film layer in a non-vacuum state by using electrodeposition, wherein the preferred orientation of the translucent film layer is determined in a particular direction, and the active layer grows in the particular direction determined in the translucent film layer. By controlling an electrochemical growth behavior through a metal surfactant, the present invention shows the effect of solving the high-resistivity problem, that is, the drawback of a p-type oxide semiconductor grown in a low-temperature electrodeposition process.