DEVICE AND METHOD FOR ANISOTROPIC DEEP REACTIVE-ION ETCHING WITH A FLUORINE GAS MIXTURE

摘要

The invention relates to an etching method for the anisotropic structuring of a substrate (101) by means of deep reactive-ion etching (DRIE) with multiple interchangeably consecutive etching steps and passivation steps. According to the invention, a fluorine gas mixture is used for etching, which has a proportion of greater than 25% up to and including 40% fluorine, a proportion of 1% to 50% nitrogen and a proportion of 30% up to and including 60% of a noble gas. The invention also relates to the use of a fluorine gas mixture of this type, and to a corresponding device (300) for structuring a substrate (101, 302) by means of the fluorine gas mixture according to the invention.