The present invention relates to an etching method for anisotropically structuring a substrate 101 using deep reactive-ion etching (DRIE) in which an etching step and a passivation step are performed alternately and successively several times. According to the invention, a fluorine gas mixture comprising fluorine in a proportion of greater than 25% to 40% or less, nitrogen in a proportion of 1% to 50% and an inert gas in a proportion of 30% to 60% is used for etching. The present invention also relates to the use of such fluorine gas mixtures for structuring substrates ( 101 , 302 ) using the inventive fluorine gas mixtures and a corresponding apparatus ( 300 ).
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