DEVICE AND METHOD FOR ANISOTROPIC DEEP REACTIVE-ION ETCHING WITH A FLUORINE GAS MIXTURE

摘要

An etching method for anisotropically structuring a substrate by means of deep reactive-ion etching (DRIE) includes several alternating successive etching steps and passivation steps. According to the invention, a fluorine gas mixture having a proportion of more than 25% up to and including 40% of fluorine, a proportion of 1% to 50% of nitrogen and a proportion of 30% up to and including 60% of a noble gas is used for etching. In addition, the invention concerns the use of such a fluorine gas mixture as well as a corresponding apparatus for structuring a substrate by means of the inventive fluorine gas mixture.