METHOD FOR PRODUCING SILICON NANOPARTICLES CONTAINING P-TYPE OR N-TYPE IMPURITIES, METHOD FOR MANUFACTURING SOLAR CELL ELEMENT, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

[Problem] To provide a method for producing silicon nanoparticles containing p-type or n-type impurities, in which a top-down method by a liquid phase method which is suitable for mass production is employed, and whereby the effective doping of p-type or n-type impurity atoms into the inside of silicon can be achieved. [Solution] A method for producing silicon particles is employed, which involves the following three particle refining steps: a first addition step of adding hydrofluoric acid to an aqueous solvent containing a silicon powder; a second addition step of adding an oxidizing agent having an activity to oxidize the surfaces of the silicon particles to the solvent; and an etching step of carrying out etching while applying an external force to the mixture. In the case where the impurities to be doped are of p-type, the silicon particles may be doped with the impurities prior to the above-mentioned three particle refining steps. In the case where the impurities to be doped are of n-type, the silicon particles may be doped with the impurities after the above-mentioned three particle refining steps.