/ CMP CMP METHOD FOR SUPPRESSION OF TITANIUM NITRIDE AND TITANIUM/TITANIUM NITRIDE REMOVAL

摘要

This document describes a chemical mechanical polishing (CMP) method for removal of a metal layer deposited on a titanium nitride (TiN) or titanium / titanium nitride (Ti / TiN) barrier layer. The method comprises abrading a metal layer using an acidic CMP composition to expose a underlying TiN or Ti / TiN layer, wherein the TiN or Ti / N layer is polished at a low rate due to the presence of a surfactant inhibitor . The acidic CMP composition comprises a particulate abrasive (e.g., silica, alumina) suspended in a liquid carrier containing a surfactant selected from the group consisting of anionic surfactants, nonionic surfactants, cationic surfactants, and combinations thereof do.