/ CMP CMP METHOD FOR SUPPRESSION OF TITANIUM NITRIDE AND TITANIUM/TITANIUM NITRIDE REMOVAL

摘要

Described herein is a chemical mechanical polishing (CMP) method for the removal of a metal layer deposited on a titanium nitride (TiN) or titanium/titanium nitride (Ti/TiN) barrier layer. The method comprises abrading a metal layer using an acidic CMP composition to expose an underlying TiN or Ti/TiN layer, wherein the TiN or Ti/N layer is polished at a low rate due to the presence of a surfactant inhibitor . The acidic CMP composition comprises a particulate abrasive (eg, silica, alumina) suspended in a liquid carrier containing a surfactant selected from the group consisting of anionic surfactants, nonionic surfactants, cationic surfactants, and combinations thereof. do.