PN SELF-POWERED GAS SENSOR USING DIMENSIONAL TRANSITION METAL DICHALOGENIDES BASED PN DIODE AND MANUFACTURING METHOD THEREOF

摘要

According to one embodiment of the present invention, a manufacturing method of a self-powered gas sensor using a two dimensional transition metal compound-based PN diode comprises: a step of generating a first electrode on a substrate; a step of forming a P-type semiconductor and an N-type semiconductor with transition metal dichalcogenide on a substrate generated with the first electrode by using a chemical vapor deposition (CVD) based large-area synthesis method; and a step of generating a second electrode on the substrate formed with the P-type semiconductor and the N-type semiconductor, thereby capable of quickly detecting gas molecules without using external power.