PN PN JUNCTION DIODE BASED ON TRANSITION METAL DICHALCOGENIDES AND METAL OIXDE SEMICONDUCTORS AND METHOD OF MANUFACTURING THE SAME

摘要

The present invention discloses a PN junction diode using a heterojunction of a transition metal dicalcogenide and a metal oxide semiconductor, and a manufacturing method thereof. A PN junction diode according to an embodiment of the present invention includes a substrate; A transition metal dicalcogenide layer formed on the substrate and operating as a p-type semiconductor; A metal oxide semiconductor layer having a larger energy bandgap than the transition metal decalcogenide layer and formed in a predetermined pattern on the transition metal decalcogenide layer and operating as an n-type semiconductor; A first electrode formed on the transition metal decalcogenide layer; And a second electrode formed on the metal oxide semiconductor layer. The charge separation is induced by controlling an energy band gap between the transition metal decalcogenide layer and the metal oxide semiconductor layer.