Electrically tunable spectral responsivity in metal-semiconductor-metaln photodetectors based on low-dimensional ZnCdS/ZnMgS/GaP, ZnCdS/ZnS/GaPn heterostructures

摘要

We report on growth, fabrication and characterization of metal-semiconductor-metal (MSM) photodetectors based on periodic heterostructures with ZnCdS quantum wells separated by ZnMgS and ZnS barrier layers. Heterostructures were grown on semi-insulating GaP substrates by MOVPE. MSM-diodes with width of Ni-Au interdigitated Schottky barrier contacts and gap between them of 3 mu m and total detector area of 100 x 100 mu m(2) have been fabricated. Detecting properties of MSM-heterophotodiodes have