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Method for manufacturing spin coating based high quality solution-processed boron nitride thin film and its application in electronic devices

机译:基于旋涂的优质固溶氮化硼薄膜的制造方法及其在电子设备中的应用

摘要

The present invention relates to a method for manufacturing a high-quality boron nitride (BN) thin film based on a solution process and a method for applying the same to a device, and more specifically, to a method for forming a high-quality BN thin film on various substrates based on a large area by dissolving BN powder in a solvent using a solution process instead of a conventional method for growing a thin film using complex and expensive vacuum equipment, wherein, in a process of manufacturing a high-quality BN thin film, the high-quality BN thin film is made of a two-dimensional nanostructure electronic material. According to the present invention, a BN thin film manufactured by using a solution process can be formed while including advantages of the solution process, thereby enabling large-area deposition and a low-temperature process with a heat treatment temperature less than 100°C, reducing process costs, and having excellent characteristics compared to a CVD growth method in terms of energy efficiency.
机译:本发明涉及基于溶液法制造高质量氮化硼(BN)薄膜的方法及其将其应用于器件的方法,更具体地,涉及形成高质量氮化硼(BN)的方法。通过使用溶液法将BN粉末溶解在溶剂中的方法来大面积地在各种基板上形成薄膜,而不是使用复杂且昂贵的真空设备来生长薄膜的常规方法,其中,在制造高质量BN的过程中薄膜,高质量的BN薄膜由二维纳米结构电子材料制成。根据本发明,可以形成具有固溶处理的优点的同时通过固溶处理制造的BN薄膜,从而可以进行大面积的成膜和热处理温度低于100℃的低温处理。与CVD生长方法相比,它降低了工艺成本,并且在能源效率方面具有出色的特性。

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