首页> 外国专利> Method for manufacturing spin coating based high quality solution-processed boron nitride thin film and its application in electronic devices

Method for manufacturing spin coating based high quality solution-processed boron nitride thin film and its application in electronic devices

机译:基于旋涂的优质固溶氮化硼薄膜的制造方法及其在电子设备中的应用

摘要

The present invention relates to a solution process-based high quality boron nitride thin film (BN thin film) manufacturing method and a device application method, a high-quality boron nitride (BN) thin film manufacturing process, a two-dimensional nanostructure electronic material material is a conventional complex and expensive Instead of using vacuum equipment to grow thin films, BN powder is dissolved in a solvent using a solution process to produce high quality boron nitride thin films on various substrates based on large area. It relates to a method of forming. Boron nitride (BN) fabricated using the solution process enables the formation of a BN thin film while including the advantages of the solution process, so that large-area deposition is possible, and a low temperature process temperature and a process cost of less than 100 ° C. It can be lowered and has superior characteristics compared to the CVD growth method in terms of energy efficiency.
机译:本发明涉及基于溶液法的高质量氮化硼薄膜(BN薄膜)的制造方法和器件的应用方法,高质量氮化硼(BN)薄膜的制造方法,二维纳米结构电子材料这种材料是传统的复杂且昂贵的材料,而不是使用真空设备来生长薄膜,而是通过溶液法将BN粉溶解在溶剂中,从而在大面积的各种基板上生产高质量的氮化硼薄膜。它涉及一种形成方法。使用固溶工艺制造的氮化硼(BN)能够形成BN薄膜,同时具有固溶工艺的优势,因此可以进行大面积沉积,并且低温工艺温度和低于100的工艺成本°C。与CVD生长法相比,它在能量效率方面可以降低并具有优越的特性。

著录项

  • 公开/公告号KR102023106B1

    专利类型

  • 公开/公告日2019-09-20

    原文格式PDF

  • 申请/专利权人 광운대학교 산학협력단;

    申请/专利号KR20170022337

  • 发明设计人 하태준;전준영;

    申请日2017-02-20

  • 分类号H01L21/02;H01L21/324;

  • 国家 KR

  • 入库时间 2022-08-21 11:47:46

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