3D NAND METAL FLOATING GATE COMPOSITE 3D NAND MEMORY DEVICES AND ASSOCIATED METHODS

摘要

A 3D NAND memory structure with improved process margin and improved performance is provided. Such a memory structure may include a control gate material and a floating gate material disposed between the first and second insulating layers, a metal layer disposed between the control gate material and the floating gate material, an inter-poly dielectric (IPD) An IPD layer disposed between the metal layer and the control gate material to electrically isolate the control gate material from the floating gate material, and a tunnel dielectric material coupled to the floating gate material opposite the control gate material.