METAL FLOATING GATE COMPOSITE 3D NAND MEMORY DEVICES AND ASSOCIATED METHODS

摘要

A 3D NAND memory structure having improved process margin and enhanced performance is provided. Such a memory structure can include a control gate material and a floating gate material disposed between a first insulating layer and a second insulating layer, a metal layer disposed between the control gate material and the floating gate material, an interpoly dielectric (IPD) layer disposed between the metal layer and the control gate material such that the IPD layer electrically isolates the control gate material from the floating gate material, and a tunnel dielectric material coupled to the floating gate material opposite the control gate material.