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USE OF CENTROSYMMETRIC MOTT INSULATORS IN A RESISTIVELY SWITCHED MEMORY FOR STORING DATA
USE OF CENTROSYMMETRIC MOTT INSULATORS IN A RESISTIVELY SWITCHED MEMORY FOR STORING DATA
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机译:在电阻开关存储器中使用测力莫特绝缘子存储数据
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摘要
A material belonging to the family of centrosymmetric Mott insulators is used as an active material in a resistively switched memory for storing data. The material is placed between two electrical electrodes, by virtue of which an electric field of a preset value is applied in order to form, by way of an electron avalanche effect, an elementary information cell that has at least two logic states.
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