Non-thermal resistive switching in Mott insulator nanowires

摘要

SEM image of a V O nanowire contacted by two Ti/Au pads (top and bottom) and schematic of the measurement setup. and are the temperatures of the substrate and the nanowire, respectively, which differ due to the applied power. Resistance vs. power curves measured above the IMT temperature in the fully metallic state of a V O nanowire at between 169 and 179 K (blue to red). Resistance vs. (colored lines) derived from using Eq. ( ) with a single fitting parameter  = 24 μW K for all curves (colored). The black curve shows the resistance vs. stage temperature at equilibrium, ( ). The horizontal axis refers both to the stage temperature during the equilibrium (low power) measurement and .