Growth of multi-layer group III-nitride buffers on large-area silicon substrates and other substrates

摘要

A kind of method includes being formed in the first epitaxial layer on a semiconductor substrate and etching the first epitaxial layer, to form the first epitaxial region of multiple separation. This method further includes forming the second epitaxial layer, is etching the first epitaxial layer. Each epitaxial layer includes at least one group III-nitride, and a buffer is collectively formed with epitaxial layer. This method further comprises forming device layer to use semiconductor device layer in buffer and manufacture. Second epitaxial layer may include the second epitaxial region substantially only in the first epitaxial region. Second epitaxial layer can also cover the first epitaxial region and substrate, the second epitaxial layer can with or be not etched. Device layer is used to form the second epitaxial layer during being formed in same operation.