PHOTOVOLTAIC CELL WITH THICK SILICON OXIDE AND SILICON NITRIDE PASSIVATION AND FABRICATION METHOD

摘要

A method for the production of a solar cell is disclosed , comprising the steps of providing a silicon substrate having a front main surface and a back main surface; depositing a dielectric layer on the back main surface; depositing a passivation layer comprising hydrogenated SiN on top of the dielectric layer; forming holes in the dielectric layer and the SiN:H layer; depositing a layer of contacting material onto the dielectric layer, hereby filling, the holes; and applying a high temperature step. Furthermore a solar cell device is disclosed comprising a silicon substrate having a front main surface and a back main surface; a dielectric layer on the back main surface; a passivation layer comprising hydrogenated SiN on top of the dielectric layer; holes through the dielectric layer and theSiN:H layer; and layer of contacting material onto the dielectric layer, the layer also filling the holes.