PHOTOVOLTAIC CELL WITH THICK SILICON OXIDE AND SILICON NITRIDE PASSIVATION AND FABRICATION

摘要

A method for the production of a photovoltaic device, for instance solar cell,is disclosed, comprising the steps of providing a substrate having a frontmain surface and a rear surface; depositing a dielectric layer on the rearsurface, wherein the dielectric layer has a thickness larger than 100 nm;depositing a passivation layer comprising hydrogenated SiN on top of thedielectric layer and forming back contacts through the dielectric layer andthe passivation layer. A method for the production of a photovoltaic device,for instance solar cell, is also disclosed, comprising the steps of providinga substrate having a front main surface and a rear surface; depositing adielectric layer stack on the rear surface, wherein the dielectric layer stackcomprises a sub-stack of dielectric layers, the sub-stack having a thicknesslarger than 100 nm, the dielectric layer stack having a thickness larger than200 nm; and forming back contacts through the dielectric layer stack.Corresponding photovoltaic devices, for instance solar cell devices, are alsodisclosed.